unisonic technologies co., ltd UTT80N75 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r502-881.a 80 a , 75v n-channel power mosfet ? description the utc UTT80N75 is an n-channel power mosfet, it uses utc?s advanced technology to provide customers with a minimum on-state resistance, low gate char ge and high switching speed. ? features * 80a, 75v, r ds(on) =10m ? @v gs =10v, i d =20a * low gate charge ( typical 117nc) * high switching speed to-220 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UTT80N75l-ta3-t UTT80N75g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source
UTT80N75 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-881.a ? absolute maximum ratings (t a =25c) parameter symbol ratings unit drain-source voltage v dss 75 v gate-source voltage v gss 25 v drain current continuous i d 80 a pulsed i dm 320 a avalanche energy single pulsed e as 330 mj power dissipation p d 167 w junction temperature t j -50~+150 c storage temperature range t stg -50~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 0.75 c/w ? electrical characteristics parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 75 v drain-source leakage current i dss v ds =75v, v gs =0v 10 a gate-source leakage current forward i gss v gs =+25v, v ds =0v +100 na reverse v gs =-25v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2 4 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =20a 10 12 m ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 3700 pf output capacitance c oss 730 pf reverse transfer capacitance c rss 240 pf switching parameters total gate charge q g v gs =10v, v dd =60v, i d =40a, i g =3.33ma 117 nc gate to source charge q gs 27 nc gate to drain charge q gd 47 nc turn-on delay time t d ( on ) v dd =30v, i d =1.0a, r g =4.6 ? , v gs =10v 25 ns rise time t r 25 ns turn-off delay time t d ( off ) 66 ns fall-time t f 30 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 80 a maximum body-diode pulsed current i sm 320 a drain-source diode forward voltage v sd i s =80a, v gs =0v 1.5 v body diode reverse recovery time t rr ns
UTT80N75 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-881.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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